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기술을 완성하는 기술 솔루션코리아

Discrete IC

Circuit Protection Solution
폭넓은 ESD/TVS 제품군으로 다양한 고객의 환경에 최적의 회로보호 솔루션을 제공합니다.

How ESD flows into system
How ESD flows into system
Human-body model (HBM)
The most general ESD model characterizing the susceptibility of electronic equipment damage thet may result from electrostatic discharge that may occer when a person touches an electronic device.
The widely used definition of HBM is United States military standard, MIL-STD-883, Method 3015.9.
It is classified by ESD sensitivity. This method is a required test procedure in forming simplified equivalent circuit and HBM ESD Modelling.
Internationally widely used model is ESDA/JEDEC standard JS-001.
HBM is used to quantify IC durability against ESD mainly during manufacturing process.
JEDEC document JEP155 states that 500-V HBM allows safe mamufacturing with a standard ESD control process.
Charged-device model (CDM)
The most common model characterizing that the package/frame of Electrinic components are charged by friction and characterize the extent of the damage of electric devices by ESD originating form lead pin charged.
This model is alternative to human-body model
Classify electronic devices by CDM and charge them by standard voltage level then do the durability test against ESD. If it resist without fail, it goes to next level test. It continues to be carried out until it fails in this manner.
Standardized with CDM ANSI/ESDA/JEDEC and co-standardized with ESDA/JEDEC stadard JS-002.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
IEC 61000-4-2
Quantify system level test and protection-level for practical ESD under uncontrolled environment.
IEC 61000-4-2 ESD standard
Current Curve Comparison for ESD Models
How TVS Diode Protects Devices
Main TVS Line-up
Major Function Zener Diode TVS Diode Varistor (MOV)
Protection Target Low bandwidth signal line,
small power line
High bandwidth signal line,
Small to Middle power lines
Small to Large power lines
Clamping Uni, Bi-directional Uni, Bi-directional,
Customized packge
Bi-directional
Bandwidth Low : ~10 kHz
Large capacitance
High : ~ 2 GHz
*Fast response
Power line protection
: ~ 1 KHz
Clamping Voltage
Discharge (8/20uS) : Current
: 2V ~ 200V
: 0.5mA ~ 10mA
: ~ 100V
: 0.5A ~ 100A
: 10V ~ 1200V
: 1A ~ 10kA
Clamping Voltage
v.s. Reverse Stand Off Voltage
1.5 times ~ 2.5 times 1.5 times ~ 2.5 times 1.5 times ~ 2.5 times
Devices in a Package 1 ea
Lead type, SMD
1 ea ~ 10 ea
SMD
1 ea
Lead type, SMD
Life Time Semi-permanent Semi-permanent tabescent
(Chemical compound structure)
TVS Major Parameter Selection
No. Parameter in TVS specification Relation to system/th>
1 Dynamic resistance and clamping voltage Peak pulse power (tp = 8/20 us)
2 Breakdown voltage Voltage level responsible to external noise
3 Off - state impedance or leakage current No insertion loss by TVS Diode
4 Parasitic capacitance Direct influence to system bandwidth
5 Maximum ESD capability Capability Level of external ESD noise immunity
6 Multiple pulse capability Life time to exhausting
7 Device configuration and layout flexibility Package with convenience to PCB pattern matching
8 Package geometry Form factor or foot print
TVS Major Parameter Selection
Part No. Package Polarit PPK(W) IPP(A) VC(V) VBR(V) Cj(pF) VESD(KV)
ESDBL0531Z DFN0603 Bi 60 3 20 7-11 0.4 ± 12 / ± 15
ESDBL0541Z DFN0603 Bi 25 2 15 6-9.5 9 ± 17 / ± 17
ESDBL0531P DFN1006-2B Bi 80 4 20 6-11 0.8 ± 12 / ± 20
ESDU130BP DFN1006-2B Uni 85 8 11 6 30 ± 8 / ± 15
ESDB18HP DFN1006-2H Bi 40 1.6 25 17.1-18.9 21 ±8 / ± 15
ESDB0511P DFN1006-2H Bi 170 12 14 6-10 75 ± 8 / ± 15
ESDUL0502ABP DFN1006-3B Bi 25 2 12.5 6 10 ± 15 / ± 20
ESDU5V0AHP DFN1006-3H Bi 150 12 14 5.5-9.5 45 ± 30
ESDU0502AHP DFN1006-3H Bi 25 2 12.5 6-8 10 ± 15 / ± 20
ESDLC1388MP DFN1308-5B / / / 4.6-8.1 5.5-8.5 0.16-0.35 ± 15 / ± 15
ESDBL5123DP DFN1608 Bi / 4.5 7.5 4-6.5 16.5 ± 16 / ± 16
ESDB2702DP DFN1608 Bi 150 2 52 21.6-32.4 30 ± 8 / ± 15
ESDB18DP DFN1608-2H Bi 40 1.6 25 17.1-18.9 21 ± 8 / ± 15
ESDB1211DP DFN1608-2H Bi 200 7 28.5 13.3 25 ± 8 / ± 15
ESDU0801GP DFN1610-2H Uni 500 50 9.6 7.96-9 1150 ± 30 / ± 30
ESDLC0544MP DFN2010-8 / 75 5 15 6.5-11 0.6 ± 12 / ± 18
ESDLC2512MP DFN2010-8 / 150 7 18 3.5 4 ± 30 / ± 30
ESDLC0524BMP DFN2510-10 / 95 5 19 6 7 ± 8 / ± 15
ESDLC3325MP DFN2510-10 / 75 5 12 3.8-5.5 0.65 ± 25 / ± 30
ESDLC3324MP DFN2520-10 / 1000 40 25 3.5 5 ± 30 / ± 30
ESDLC3328MP DFN3810-9 / 75 5 12 3.8-5.5 0.65 ± 25 / ± 30
ESDLC7538MP DFN3810-9 / 75 5 15 6.5-11 0.6 ± 20 / ± 25
ESDLC8008MP DFN5515-14 / / 16 8.1 5.5-8.5 0.35 ± 15 / ± 15
ESD1Z12 SOD-123 Uni 200 10.1 19.9 13.3-14.7 / /
ESDU3005W SOD-123 Uni - 60 15 6-9 1500 ± 30 / ± 30
P4SMF36AW SOD-123FL Uni 400 6.9 58.1 40-44.2 / ± 20 / ± 20
SMF5.0A SOD-123FL Uni 200 21.7 9.2 5 6.4-7 /
P4SMF75AH SOD-123JHE Uni 400 3.3 121 83.3-92.1 / ± 20 / ± 20
P4SMF100AH SOD-123JHE Uni 400 1.9 162 111-123 / ± 20 / ± 20
ESDBL3V0DWS SOD-323 Bi 300 1.9 15.8 4-6 2 ± 30 / ± 30
ESD3T5V0WS SOD-323 Uni 350 1 9.8 6 300 ± 25 / ± 25
ESDU0501WT SOD-523 Uni 200 16 12.5 6 160 ± 15 / ± 20
ESD5BL5V0 SOD-523 Bi 84 6 14 6~8 20 ± 30 / ± 30
ESD7Z3V3 SOD-723 Uni 113 10.4 11.9 5-5.9 80 ± 30 / ± 30
ESD0572G SOD-723 Bi 250 7 15 6-8.5 10 ± 8 / ± 15
ESDLC0654D SOT-26 / 75 5 15 5.1 20 ± 8 / ± 16
ESDLC0504D SOT-26 / 150 6 25 6 3 ± 8 / ± 15
ESDBL5612CXW SOT-323 Bi 240 2 120 58 10.5 ± 15 / ± 8
ESDBL24CXW SOT-323 Bi 200 3 70 25.4-30.3 11 23
ESDLC0502DW SOT-363 / 50 3 18 6 0.9 ± 14 / ± 17
ESDLC0504DW SOT-363 / 150 6 25 6 3 ± 8 / ± 15
ESDL0502CAE SOT-523 / 125 5 22 6 1.2 ± 12 / ± 18
ESDL0502BE SOT-523 / 100 3 25 6 10 ± 30 / ± 30
ESDLC1213DE SOT-563 / / 5 yp at 1A 1 6 Min 1.2 ± 8 / ± 15
ESD05CA TO-236 / 350 24 14.5 6 400 /
MMBZ5V6CA TO-236 / 24 3 8 5.32-5.88 / /